 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3526-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings 600 8 32 30 8 145.6 20 5 1.67 135 +150 Operating and storage -55 to +150 temperature range *1 L=4.2mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch <150C = *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 600V = = = = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Unit V A A V A mJ kV/s kV/s W C C Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 VCC=300V ID=6A VGS=10V L=4.2mH Tch=25C IF=6A VGS=0V Tch=25C IF=6A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 0.93 6 750 100 4.0 14 9 24 7 20 8.5 5.5 1.00 0.7 3.5 Min. 600 3.0 Typ. Max. 5.0 25 250 100 1.20 1130 150 6.0 21 14 36 10.5 30 13 8.5 1.50 Units V V A nA S pF 3 ns nC 8 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 75.0 Units C/W C/W 1 2SK3526-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 18 16 14 20V 10V 8V 7.5V ID=f(VDS):80s Pulse test,Tch=25C 200 150 12 ID [A] PD [W] 10 8 6 7.0V 100 50 4 2 VGS=6.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0.1 0.1 0.1 0 1 2 3 4 5 6 7 8 9 10 1 10 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 2.6 2.4 2.2 2.0 1.8 8V VGS=6.5V 7.0V 7.5V 2.5 10V 2.0 20V 3.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V RDS(on) [ ] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 RDS(on) [ ] 1.5 max. typ. 1.0 0.5 0.0 14 16 18 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3526-01L,S,SJ FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 5.0 max. 18 16 14 24 22 20 Typical Gate Charge Characteristics VGS=f(Qg):ID=3A, Tch=25C Vcc= 120V 300V 480V VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 12 10 8 6 4 2 0 0 10 20 30 40 50 60 Tch [C] Qg [nC] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 IF=f(VSD):80s Pulse test,Tch=25C 1n Ciss 10 C [F] 100p Coss IF [A] 1 0.1 0.00 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 350 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V IAS=4A 300 10 2 tr td(off) 250 IAS=5A EAS [mJ] 200 IAS=8A t [ns] 10 1 td(on) tf 150 100 50 10 0 0 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3526-01L,S,SJ Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 23 1 42 3 1 23 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ 4 |
Price & Availability of 2SK3526-01S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |